Spatial mapping of electroluminescence due to impact ionization in high electron mobility transistors

For the first time to our knowledge, the use of a Raman microspectrometer i s proposed for recording electroluminescence spectra as well as generating complete electroluminescence maps of areas selected on the surface of a pse udomorphic high electron mobility transistor (PHEMT). More particularly, th is microspectrometer was used to investigate the impact ionization effect i n different regions of the PHEMT located between gate and drain.