Investigation on photoluminescence of ordered structure in the (AlxGa1-x)(0.51)In-0.49(x=0.29) alloys

Citation
Yj. Lu et al., Investigation on photoluminescence of ordered structure in the (AlxGa1-x)(0.51)In-0.49(x=0.29) alloys, CHIN PHYS L, 17(10), 2000, pp. 768-769
Citations number
11
Categorie Soggetti
Physics
Journal title
CHINESE PHYSICS LETTERS
ISSN journal
0256307X → ACNP
Volume
17
Issue
10
Year of publication
2000
Pages
768 - 769
Database
ISI
SICI code
0256-307X(2000)17:10<768:IOPOOS>2.0.ZU;2-I
Abstract
The temperature-dependent and excitation-intensity-dependent photoluminesce nce(PL) spectra are applied to investigate the quaternary (AlxGa1-x)(0.51)I n0.49P(x = 0.29) alloys lattice-matched to GaAs. The PL peak is excitation intensity independent, but shows anomalous temperature behavior, where PL p eak energy changes with temperature, exhibiting Z-shape dependence. The PL peak energy decreases with increasing temperature from 19 K, a blue-shift o f PL peak energy occurs between 55 K and 84 K, afterwards, the PL peak ener gy decreases monotonously again. This confirms the existence of ordered str ucture caused by superlattice effect in the (AlxGa1-x)(0.51)In0.49P(x = 0.2 9) alloys.