Deuterium trapping in ion implanted, thermally-grown oxide layers and codeposited beryllium oxide

Deuterium trapping in beryllium oxide films irradiated with 400 eV D ions h as been studied by Thermal Desorption Spectroscopy (TDS). It has been found that for thermally grown BeO films implanted in the range 300-900 K the to tal deuterium retention doesn't depend on irradiation temperature whereas T DS spectra are temperature dependent. For R.T. implantation the deuterium i s released in a wide range from 500 to 1100 K. At implantation above 600 K the main portion of retained deuterium is released in a single peak centere d at about 1000 K. The similar TDS peak is measured for D/BeO co-deposited layer. In addition we correlate our implantation data on BeO with the relev ant data on beryllium metal and carbon. The interrelations between deuteriu m retention and microstructure are discussed.