Fabrication and properties of AgInTe2 thin films

Citation
Iv. Bodnar et al., Fabrication and properties of AgInTe2 thin films, INORG MATER, 36(10), 2000, pp. 1000-1003
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
INORGANIC MATERIALS
ISSN journal
00201685 → ACNP
Volume
36
Issue
10
Year of publication
2000
Pages
1000 - 1003
Database
ISI
SICI code
0020-1685(200010)36:10<1000:FAPOAT>2.0.ZU;2-L
Abstract
AgInTe2 thin films were deposited onto glass substrates by pulsed laser abl ation. Their structure, composition, and transmission and reflection spectr a in the range 0.5 to 2.5 mum were studied. The absorption coefficient, ene rgies of band-to-band transitions, and parameters of crystal-field and spin -orbit splittings were determined. The results obtained for the AgInTe2 fil ms are in good agreement with the data for bulk crystals.