Transformation of luminescence centers in (SiC)(0.95)(AlN)(0.05) epitaxiallayers under laser irradiation

Authors
Safaraliev, GK Emirov, YN Kurbanov, MK Isabekova, TI
Citation
Gk. Safaraliev et al., Transformation of luminescence centers in (SiC)(0.95)(AlN)(0.05) epitaxiallayers under laser irradiation, INORG MATER, 36(10), 2000, pp. 1018-1019
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
INORGANIC MATERIALS
ISSN journal
00201685 → ACNP
Volume
36
Issue
10
Year of publication
2000
Pages
1018 - 1019
Database
ISI
SICI code
0020-1685(200010)36:10<1018:TOLCI(>2.0.ZU;2-2
Abstract
The effect of laser irradiation on the photoluminescence of (SiC)(0.95)(AlN )(0.05) epitaxial films was studied. irradiation was found to dislodge Al a nd N atoms from their substitutional sites, producing radiative donor-accep tor pairs Al-Si-N-C. The average pair separation decreases with increasing irradiation time, as evidenced by the shift of the corresponding emission t o higher energies.