Photothermal ionization spectroscopy of Be acceptor in GaAs

The photothermal ionization spectroscopy (PTIS) was employed to study Be sh allow acceptor states in MBE-grown GaAs films. The G line, C line and D lin e transitions were observed and attributed to the ones from the ground stat e 1S(3/2)(Gamma (+)(8)) Of Be acceptor to the first three excited odd-parit y states 2p(3/2)(Gamma (-)(8)) , 2p(5/2)(Gamma (-)(8)) and 2p(5/2) (Gamma ( +)(8)), respectively throngh comparison with theoretical calculation. The t ransition from the ground state 1s(3/2) (Gamma (+)(8)) to the excited state 2p(1/2)(Gamma (-)(6)) was also observed. According to the PTIS, the bindin g energy of Be acceptor in GaAs was deduced to be 28. 6meV.