MBE growth and characterization of heavily doped p(+)-ZnSe : N epilayers

A simplified plasma nitrogen source, of which the principal part is made of a quartz tube , was fabricated and mounted into the home-made FW- III MBE machine as a p-type dopant for the growth of p-ZnSe:N epilayers. The source was activated by means of radio frequency. Under the conditions given here , a series of high quality p-type ZnSe crystal films were obtained. The SI MS results indicate that the nitrogen concentration in the ZnSe films is hi gher than similar to1.5 x 10(20)cm(-3) , and the C-V measurements with evid ence of data of FIR spectroscopy make it clear that the net hole concentrat ion [N-a]-[N-d] is about 5 x 10(17)cm(-3). PL measurements show that nitrog en acceptor level is formed in ZnSe. Compared with the references , the ZnS e films with such a high hole concentration (4.0 x 10(17)cm(-3) could be us ed to fabricate blue-green laser diodes in principle.