T. Ichiki et al., Precise chrome etching in downstream chlorine plasmas with electron depletion through negative ion production, J ELCHEM SO, 147(11), 2000, pp. 4289-4293
In micropatterning down to 0.1 mum class devices, photolithography requires
highly accurate microfabrication of chrome (Cr) reticle masks. In this pap
er we report the vertical chrome etching using electron beam (EB) resist ma
sks in downstream chlorine plasmas, where the resist damage during etching
can be suppressed because of the reduced electron density through negative
ion production. Though the Cr etch rare in pure Cl-2 downstream plasmas was
only 15 Angstrom /min, slight oxygen addition of 1% resulted in a great in
crease of Cr etch rates as large as 20 times, while resist etch rates incre
ased only twice. Though isotropic Cr etching reactions with chlorine and ox
ygen radicals caused undercut features, appropriate substrate biasing allow
s vertical patterning of 0.2 mum wide lines and spaces due to sidewall prot
ection by redeposition of by-products from etched Cr and resists. (C) 2000
The Electrochemical Society. S0013-4651(00)02-080-2. All rights reserved.