Improvement of post-chemical mechanical planarization characteristics on organic low k methylsilsesquioxane as intermetal dielectric

This work has investigated the electrical and material characteristics of p ost-chemical mechanical planarization (CMP) methylsilsesquioxane (MSQ). Exp erimental results have shown that the dielectric properties of low k MSQ de teriorate after the CMP process. However, by applying H-2-plasma post-treat ment, the degraded characteristics can be restored to a similar state as th at of a pre-CMP MSQ film. Material and electrical analyses were performed t o elucidate the detailed mechanisms of H-2-plasma treatment on post-CMP MSQ . H-2-plasma treatment provides active hydro en radicals to passivate the d angling bonds exposed in the MSQ after the CMP process. The hydrogen-rich p assivation layer is hydrophobic and effectively prevents further moisture u ptake. Therefore, a degradation-free CMP process can be achieved employing H-2-plasma treatment. (C) 2000 The Electrochemical Society. S0013-4651(00)0 4-098-2. All rights reserved.