Defect trapping and annealing for transition metal implants in group III nitrides

The annealing of implantation induced lattice damage in AlN, GaN and InN wa s studied by means of the perturbed angular correlation (PAC) technique usi ng the PAC probe Hf-181(Ta-181). In all three lattices substantial fraction s of the probe atoms occupied substitutional lattice sites after annealing. A detailed investigation of the changes observed during isochronal anneali ng indicates differences in the recovery process. In GaN the trapping of a unique defect, possibly a Nitrogen vacancy, in an intermediate temperature range was found.