We propose the use of proper orthogonal decomposition (POD) techniques as a
reduced basis method for computation of feedback controls and compensators
in a high-pressure chemical vapour deposition (HPCVD) reactor. In this pap
er, we present a proof-of-concept computational implementation of this meth
od with a simplified growth example for III-V layers in which we implement
Dirichlet boundary control of a dilute Group III reactant transported by co
nvection and diffusion to an absorbing substrate with no reactions. We impl
ement the model-based feedback control using a reduced order state estimato
r based on observations of the flux of reactant at the substrate centre. Th
is is precisely the type of measurements available with current sensing tec
hnology. We demonstrate that the reduced order state estimator or compensat
or system is capable of substantial control authority when applied to a hig
h-order system. In principle, these ideas can be extended to more general H
PCVD control situations by including multiple species with gas-phase reacti
ons and surface reactions. Copyright (C) 2000 John Wiley & Sons, Ltd.