Electrically stimulated movement of edge dislocations in silicon in the temperature range 300-450 K

The movement of edge dislocations and the related acoustic emission of Si ( 111) carrying a direct current of density 0.5-5 x 10(5) A/m(2) in the [110] direction are studied in the temperature range T = 300-450 K. It is shown that the basic mechanism of dislocation movement is the electric wind deter mining the magnitude of the effective charge (per atom of the dislocation l ine) Z(eff) = 0.06 (n-Si) and -0.01 (p-Si). Matching theory with experiment al data has made it possible to determine the main contribution of edge dis locations to the acoustic-emission response of the silicon samples under in vestigation. The characteristic transition frequencies of dislocations in n - and p-Si from one metastable state into another are found to be f(max) = 0.1-0.5 Hz. The numerical values of the diffusion coefficient for atoms in the dislocation impurity atmosphere are estimated as 3.2 x 10(-18) m(2)/s ( n-Si) and 1.5 x 10(-18) m(2)/s (p-Si). (C) 2000 MAIK "Nauka/Interperiodica" .