Fabrication and photoelectronic properties of ZnTe single crystals and schottky diodes

n- and p-ZnTe single crystals were grown by the method of the gaseous-phase reactions using various halogen-containing agents (NH4Cl, NH4Br, and NH4I) as the carrier gases. Luminescent properties of the crystals were studied in relation to the type of the carrier gas. In/ZnTe Schottky barriers were formed. The photovoltaic effect was studied in the obtained structures for cases of natural and linearly polarized radiation. It was ascertained that the induced photopleochroism of the Schottky barriers is controlled by the angle of incidence of radiation and remains unchanged in the region of high photosensitivity. It is concluded that the obtained barriers may be used a s broadband photosensors of linearly polarized radiation. (C) 2000 MAIK "Na uka/ Interperiodica".