Photoresponse and electroluminescence of silicon-< porous silicon >-< chemically deposited metal > structures

Photoelectric and electroluminescent properties of silicon-< porous silicon > structures with chemically deposited metal contacts were investigated. T he large specific surface area of the contact and selective metal depositio n only on the macrocrystalline elements of the structure provide better pho toelectric performance of the photodiodes compared to the structures with e vaporated contacts, especially in the short-wavelength spectral range. The obtained electroluminescence spectra are explained by metal-silicon barrier properties under forward bias and by double carrier injection into nanocry stallites under reverse bias. (C) 2000 MAIK "Nauka/Interperiodica".