The power density giving rise to optical degradation of mirrors in InGaAs/AlGaAs/GaAs-Based laser diodes

Authors
Kotel'nikov, EY Katsnel'son, AA Kudryashov, IV Rastegaeva, MG Richter, W Evtikhiev, VP Tarasov, IS Alferov, ZI
Citation
Ey. Kotel'Nikov et al., The power density giving rise to optical degradation of mirrors in InGaAs/AlGaAs/GaAs-Based laser diodes, SEMICONDUCT, 34(11), 2000, pp. 1341-1342
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
34
Issue
11
Year of publication
2000
Pages
1341 - 1342
Database
ISI
SICI code
1063-7826(2000)34:11<1341:TPDGRT>2.0.ZU;2-M
Abstract
The InGaAs/AlGaAs/GaAs double laser heterostructures of separate confinemen t with a quantum well were formed by molecular-beam epitaxy. The study of c haracteristics of laser diodes with a wide contact (100 mum) showed that th e power corresponding to the catastrophic degradation of mirrors may attain nearly the highest values ever achieved (20 MW/cm(2)) that were previously obtained for laser diodes based on InGaAsP/GaAs heterostructures alone. (C ) 2000 MAIK "Nauka/Interperiodica".