InAsSb/InAsSbP double-heterostructure lasers emitting at 3-4 mu m: Part I

Previous publications concerned with the development and investigation of I nAsSb/InAsSbP double heterostructure lasers emitting at 3-4 mum fabricated by liquid phase epitaxy are reviewed. In pulsed mode, the maximum operating temperature of the lasers is 203 K, the characteristic temperature is 35 K , and differential quantum efficiency is 20 +/- 5% at 77K. Mesa-stripe lase rs with a 10- to 30-mum stripe width and a 200- to 500-mum cavity length ca n operate in CW mode up to 110 K. The total optical output power of more th an 10 mW at lambda = 3.6 mum is obtained at T = 82 K in CW mode. The output power per mode does not exceed 2 mW/facet. A single-mode lasing is achieve d in the temperature range of 12-90 K. (C) 2000 MAIK "Nauka/ Interperiodica ".