Fabrication of GaAs/AlGaAs high electron mobility transistors with 250 nm gates using conformal phase shift lithography

This paper establishes the feasibility of soft lithography for fabrication of submicron-scale electronic devices. Near-field conformal phase shift lit hography - a representative soft lithographic technique - was used on a bro adband exposure tool to fabricate the gate fingers of a high electron mobil ity transistor (HEMT), The gates of this proof-of-concept device had length s of 250 nm and widths of 40 mum The device had a transconductance of 4 mS and a current-voltage response similar to that of a conventional HEMT. (C) 2000 Elsevier Science B.V. All rights reserved.