Global existence and relaxation limit for smooth solutions to the Euler-Poisson model for semiconductors

Authors
Ali, G Bini, D Rionero, S
Citation
G. Ali et al., Global existence and relaxation limit for smooth solutions to the Euler-Poisson model for semiconductors, SIAM J MATH, 32(3), 2000, pp. 572-587
Citations number
16
Categorie Soggetti
Mathematics
Journal title
SIAM JOURNAL ON MATHEMATICAL ANALYSIS
ISSN journal
00361410 → ACNP
Volume
32
Issue
3
Year of publication
2000
Pages
572 - 587
Database
ISI
SICI code
0036-1410(20001023)32:3<572:GEARLF>2.0.ZU;2-M
Abstract
We establish the global existence of smooth solutions of the Cauchy problem for the one-dimensional Euler Poisson model for semiconductors, under the assumption that the initial data are perturbations of a stationary solution of the drift-diffusion equations. The resulting evolutionary solutions con verge asymptotically in time to the unperturbed state.