Interfacial diffusion in a double quantum well structure

We have studied interdiffusion processes occurring in a metal organic chemi cal vapour deposition (MOCVD) grown InP/In0.33Ga0.67As/InP/In0.33Ga0.67As/I nP double quantum well structure through secondary ion mass spectrometry an d high-resolution x-ray diffraction measurements along with a simulation pr ogramme. Results show an interdiffusion of phosphorus into the quantum well s and the presence of a 10 nm thick intermixed zone of In, As and P formed in-between the cap layer and the subsequent quantum well. Combination of th ese two techniques along with the simulation is a novel approach towards th e understanding and quantification of in-depth compositional variation in t hin films, in general. Copyright (C) 2000 John Wiley & Sons, Ltd.