Structural, optical and electrical characterization of In/CdS/glass thermally annealed system

Chemical bath deposited CdS thin films coated with an evaporated indium thi n film were analyzed by electrical, optical absorption, spectroscopic ellip sometry, X-ray and AFM measurements. As-deposited and thermally annealed (2 50-400 degreesC) samples were evaluated. Heat treatments promote the format ion of an external In2O3 layer, as revealed by X-ray data. Indium atoms dif fuse to the CdS layer from an intermediate indium layer. CdS doped with In with resistivities of approximately 10(-1)-10(-2) Omega /cm were obtained a fter annealing the In/CdS/glass system at 350 and 400 degreesC. From the el lipsometry spectra, the evolution of the initial two-layer structure, In/Cd S/glass, with thermal annealing was investigated. The analysis shows a more complex structure than the In2O3/In/CdS/glass structure previously propose d. (C) 2000 Elsevier Science S.A. All rights reserved.