(CdTe)(1-x)(In2Te3)(x) pseudo-binary in polycrystalline CdTe-In films

Polycrystalline CdTe-In films were prepared using close-spaced vapor transp ort technique combined with free evaporation (CSVT-FE), and the stoichiomet ry and structural properties were investigated. Auger electron spectroscopy (AES) was used to quantify the stoichiometry of the indium concentration i n the films which increased according to the rise of temperature of the In source. X-Ray diffraction analysis allowed to identify the CdTe (alpha -pha se) in all films, together with the CdIn2Te4 (beta -phase) in the films gro wn at the highest temperatures of the In source. For low In concentration f ilms, the lattice parameter decreased linearly with the molar percent of In 2Te3 in CdTe (below 5 mol%). This behavior corroborated the presence of the solid solution. (C) 2000 Elsevier Science S.A. All rights reserved.