SiC thin films have been prepared by using RF reactive magnetron sputtering
(RF-RMS). The deposition parameters have been varied over a wide range to
optimize the quality of the films; substrate temperature from 700 to 1000 d
egreesC, Ar/CH4 composition from 80:20 to 50:50 and RF power from 100 to 20
0 W. The samples have been characterized by X-ray diffraction, Rutherford b
ackscattering, profilometry, FTIR spectroscopy and ellipsometry. The result
s show that good quality silicon carbide films can be prepared by using the
RF-RMS technique. (C) 2000 Elsevier Science S.A. All rights reserved.