Application of synchrotron radiation to TXRF analysis of metal contamination on silicon wafer surfaces

Authors
Pianetta, P Baur, K Singh, A Brennan, S Kerner, J Werho, D Wang, J
Citation
P. Pianetta et al., Application of synchrotron radiation to TXRF analysis of metal contamination on silicon wafer surfaces, THIN SOL FI, 373(1-2), 2000, pp. 222-226
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
373
Issue
1-2
Year of publication
2000
Pages
222 - 226
Database
ISI
SICI code
0040-6090(20000903)373:1-2<222:AOSRTT>2.0.ZU;2-B
Abstract
Synchrotron radiation based total reflection X-ray fluorescence (TXRF) has been shown to meet the critical needs of the semiconductor industry for the analysis of transition metal impurities on silicon wafer surfaces. The cur rent best detection limit achieved at the Stanford Synchrotron Radiation La boratory (SSRL) for Ni is 8 x 10(7) atoms/cm(2) which is a factor of 50 bet ter than what can be achieved using laboratory-based sources. SSRL has esta blished a TXRF facility which meets the cleanliness and stability requireme nts of the semiconductor industry. This has enabled both industrial and aca demic researchers to address industrially relevant problems. In addition re search is being carried out for the analysis of light elements such as Al a nd Na. (C) 2000 Elsevier Science S.A. All rights reserved.