Electrical conductive hard-carbon (diamond-like carbon) films formed by i-C4H10/N-2 supermagnetron plasma chemical vapor deposition method

Electrical conductive hard-carbon (diamond-like carbon, DLC) films were for med using a supermagnetron plasma chemical vapor deposition (CVD) method. U sing a mixture of i-C4H10 and N-2 gases, DLC films were deposited on therma lly oxidized Si wafers, and the film deposition rate, hardness, and resisti vity were measured. Two rf powers of the same frequency (13.56 MHz) with a rf phase difference of 180 degrees were supplied to each electrode. The low est resistivity of 1.7 x 10(3) Omega cm was observed at a N-2 concentration of 70%, at a gas pressure of 50 mtorr, an electrode temperature of 80 degr eesC, and at rf powers of 900 W/900 W. In this case, measured film depositi on rate and hardness were 2300 Angstrom /min and 1700 kg/mm(2), respectivel y. (C) 2000 Elsevier Science S.A. All rights reserved.