Reduced magnetoresistance in magnetic tunnel junctions caused by geometrical artifacts

Citation
K. Matsuda et al., Reduced magnetoresistance in magnetic tunnel junctions caused by geometrical artifacts, APPL PHYS L, 77(19), 2000, pp. 3060-3062
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
19
Year of publication
2000
Pages
3060 - 3062
Database
ISI
SICI code
0003-6951(20001106)77:19<3060:RMIMTJ>2.0.ZU;2-B
Abstract
Spuriously reduced magnetoresistance (MR) ratios have been observed in magn etic tunnel junctions in which a square contact portion with dimensions sma ller than the width of the lead electrodes connects both the top and bottom lead electrodes. The phenomenon becomes apparent by measuring the magnetor esistance of the junctions with various sizes systematically varied under a fixed line width of the electrodes. Observed junction size dependence of r esistance (R)xarea(A) products and MR ratios were analyzed through finite d ifference calculation, and it was found that there exist junction sizes for which RxA products and MR ratios are larger and smaller, respectively, tha n the intrinsic ones. (C) 2000 American Institute of Physics. [S0003-6951(0 0)02745-5].