Pyroelectric properties of AlN

Pyroelectric properties of high-quality (0001)AlN films grown on (111) Si w ere studied. The pyroelectric coefficient p was measured using the dynamic method. The value was in the range of 6-8 muC/(m(2) K), yielding a p/epsilo n figure-of-merit of 0.8-0.95. The pyroelectric coefficient was independent of temperature and applied bias. Leakage current as low as 1-2x10(-9) A/cm (2) was measured at 5 V on large area devices. The obtained results indicat e that AlN films can be used in pyroelectric thin-film devices. (C) 2000 Am erican Institute of Physics. [S0003-6951(00)05045-2].