CHEMICAL-VAPOR-DEPOSITION OF COPPER THIN-FILMS USING NEW ORGANOMETALLIC PRECURSORS WITH ALKOXYSILYLOLEFIN LIGANDS

Two new organometallic precursors (hfac)Cu(L), where hfac = hexafluoro acetylacetonate, (I): L = dimethoxymethylvinylsilane (dmomvs), and (II ): L = triethoxyvinylsilane (teovs), for chemical vapor deposition of copper thin films were developed. These copper (+1) precursors contain ing alkoxysilylolefin ligands are more thermally stable than the previ ously known (hfac)Cu(tmvs), where tmvs represents trimethylvinylsilane . At the deposition temperature of 195 degrees C, the resulting copper films had a resistivity of 2.0 mu Omega cm using precursor I in the p resence of water, and using precursor II without water additive. The t hickness of the films ranged from 4400 to 8000 Angstrom with depositio n times of 8 to 10 min.