The luminescence of ZnGa2O4 and ZnGa2O4 doped with divalent manganese
was studied by performing excitation, emission, and decay time measure
ments in the temperature range from 4.2 to 500 K. From the results of
these measurements the following mechanism can be proposed. Excitation
into the gallate host lattice leads to the formation of electron-hole
pairs which recombine radiatively on either the gallate groups or Mn2
+ or nonradiatively on quenching centers, depending on the temperature
. In the first case a blue emission is observed, whereas the maximum o
f the green Mn2+ emission is at about 500 nm. At 4.2 K the effective d
istance of energy transport from excited gallate to emitting Mn2+ is e
stimated to be 40 Angstrom. Due to the increasing mobility of the exci
ton this value increases at higher temperatures. Furthermore, the lumi
nescence properties are found to be dependent on the preparation condi
tions.