VISIBLE-LIGHT EMISSION FROM SILICON IMPLANTED AND ANNEALED SIO2 LAYERS

Silicon implanted and annealed SiO2 layers are studied usin g photolum inescence (PL) and positron annihilation spectroscopy (PAS). Two PL em ission bands are observed. a band centered at 560 nm is present in as- implanted samples and it is still observed after 1000 degrees C anneal ing. The emission time is fast. A second band centered at 780 nm is de tected after 1000 degrees C annealing. The intensity of the 780 nm ban d further increased when hydrogen annealing was performed. The emissio n time is long (1 mu s to 0.2 ms). PAS results show that defects produ ced by implantation anneal at 600 degrees C. Based on the annealing be havior and on the emission times, the origin of the two bands is discu ssed.