Citation
M. Kawaguchi et al., Low threshold current density operation of GaInNAs quantum well lasers grown by metalorganic chemical vapour deposition, ELECTR LETT, 36(21), 2000, pp. 1776-1777
Citations number
12
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194
→ ACNP
Volume
36
Issue
21
Year of publication
2000
Pages
1776 - 1777
Database
ISI
SICI code
0013-5194(20001012)36:21<1776:LTCDOO>2.0.ZU;2-H
Abstract
A metal organic chemical vapour deposition grown GaInNAs quantum well laser
emitting at 1.25 mum is reported. The lowest threshold current density obt
ained by 50 mum wide stripe lasers was 340A/cm(2) for a cavity length of 14
20 mum, which is almost comparable to the lowest value reported for GaInNAs
lasers grown by molecular beam epitaxy. The threshold current density per
well was 170A/cm(2), which is the lowest threshold value reported to date.