Citation
Hl. Zhou et al., Near ultraviolet optically pumped vertical cavity laser, ELECTR LETT, 36(21), 2000, pp. 1777-1779
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194
→ ACNP
Volume
36
Issue
21
Year of publication
2000
Pages
1777 - 1779
Database
ISI
SICI code
0013-5194(20001012)36:21<1777:NUOPVC>2.0.ZU;2-T
Abstract
Optically pumped near ultraviolet vertical cavity laser operation (VCSEL) h
as been obtained under quasi-continuous wave conditions at room temperature
near 383nm from shallow InGaN/GaN multiple quantum wells (MQWs). Low loss
optical resonators were fabricated by using in-situ grown (Al,Ga)N distribu
ted Bragg reflectors that featured strain engineering design for high optic
al morphology, in combination with low-loss dielectric multilayer mirrors.