InAlAs avalanche photodiodes with very thin multiplication layer of 0.1 mum for highspeed and low-voltage-operation optical receiver

Authors
Nakata, T Watanabe, I Makita, K Torikai, T
Citation
T. Nakata et al., InAlAs avalanche photodiodes with very thin multiplication layer of 0.1 mum for highspeed and low-voltage-operation optical receiver, ELECTR LETT, 36(21), 2000, pp. 1807-1809
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
21
Year of publication
2000
Pages
1807 - 1809
Database
ISI
SICI code
0013-5194(20001012)36:21<1807:IAPWVT>2.0.ZU;2-4
Abstract
We have developed a separated absorption and multiplication (SAM) avalanche photodiode (APD) with the thinnest reported InAlAs multiplication layer of 0.1 mum and achieved 18.8V operation, with high speed and a high GB produc t of 140GHz. This makes it possible to realise a compact 10Gbit/s APD recei ver.