Structure and thermal stability of Ni/Si1-xGex contacts for VLSI applications

Authors
Qin, M Poon, VMC Yuen, CY
Citation
M. Qin et al., Structure and thermal stability of Ni/Si1-xGex contacts for VLSI applications, ELECTR LETT, 36(21), 2000, pp. 1819-1821
Citations number
9
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
21
Year of publication
2000
Pages
1819 - 1821
Database
ISI
SICI code
0013-5194(20001012)36:21<1819:SATSON>2.0.ZU;2-M
Abstract
The sheet resistance of Si1-xGex film is measured using the four-point prob e method and is shown to remain stable at 350-600 degreesC. X-ray photoelec tron spectroscopy analysis suggests that the phase of the contact formed at 450 degreesC is Ni-2(Si1-xGex) or a mixture of Ni2Si and Ni2Ge, but that a mixture of silicide and germanium is formed at 250 degreesC.