Investigation of the structure of tungsten oxide films obtained by chemical vapor deposition

Citation
D. Gogova et al., Investigation of the structure of tungsten oxide films obtained by chemical vapor deposition, EPJ-APPL PH, 11(3), 2000, pp. 167-174
Citations number
28
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
ISSN journal
12860042 → ACNP
Volume
11
Issue
3
Year of publication
2000
Pages
167 - 174
Database
ISI
SICI code
1286-0042(200009)11:3<167:IOTSOT>2.0.ZU;2-C
Abstract
Thin amorphous and polycrystalline tungsten oxide films have been prepared by Chemical Vapor Deposition (CVD) from metallorganic precursor - tungsten hexacarbonyl - at atmospheric pressure. The dependence of the composition a nd the structure of tungsten oxide films on the technological conditions ha s been investigated by XPS, XRD, DTA-TGA and Raman spectroscopy. As a resul t it has been established that: at high values of the flow-rates of the rea ction gases amorphous films of very low density have been obtained; in the XPS spectra of the understoichiometric WO3-y (0 < y < 0.3) films besides W6 +, also W5+ and W4+ states have been observed. First to observe in the Rama n spectra of amorphous CVD-WO3 films is the band at similar to 950 cm(-1), characteristic for terminal W6+=O bonds in result of the presence of struct ural water. The existence of structural water in the amorphous material has been established by thermal analyze, also.