Very high efficiency V-band power InPHEMT MMICs

State-of-the-art power performance of a V-hand InP HEMT MMIC is reported us ing a slot via process for reducing source inductance and a fully selective gate recess process for uniformity and high yield. The 0.1 mum gate length , high performance InGaAs/InAlAs/InP HEMTs that were utilized in the circui t exhibited a maximum power density of 530 mW/mm, power added efficiency of 39%, and a gain of 7.1 dB. At 60 GHz, a single-stage monolithic power ampl ifier achieved an output power of 224 mW with a PAE of 43%, The associated gain was 7.5 dB, These results are the best combination of output power and efficiency reported for an InP device and a MMIC at V-band, and clearly de monstrates the potential of the InP HEMT technology for very high efficienc y, millimeter wave power applications.