Effects of external optical feedback from a reflection grating on the linew
idth of a GaAlAs semiconductor laser operating at 780 nm are investigated.
Accurate linewidth measurements as a function of the laser frequency tuning
have been performed by applying the self-homodyne technique with a short d
elay line. A realistic coupled-cavity model, which incorporates the frequen
cy-der pendent reflection from the grating, is used to explain the measured
data. The agreement between the theoretical and experimental results was f
ound to be good.