Feasibility analysis of laser action in erbium-doped silicon waveguides

Authors
Coffa, S Libertino, S Coppola, G Cutolo, A
Citation
S. Coffa et al., Feasibility analysis of laser action in erbium-doped silicon waveguides, IEEE J Q EL, 36(10), 2000, pp. 1206-1213
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
IEEE JOURNAL OF QUANTUM ELECTRONICS
ISSN journal
00189197 → ACNP
Volume
36
Issue
10
Year of publication
2000
Pages
1206 - 1213
Database
ISI
SICI code
0018-9197(200010)36:10<1206:FAOLAI>2.0.ZU;2-9
Abstract
The authors analyze the feasibility of laser action in erbium-doped silicon devices. The recent experimental results on spontaneous light emission at 1.54 mum from erbium-doped silicon diodes and theoretical calculation on Br agg grating technology are used to evaluate the best scenario performances. The effects of processes-induced errors on the threshold conditions are ta ken into account. They show that laser action in the Er : Si system is feas ible.