Monolithic implementation of coaxial line on silicon substrate

Citation
Ih. Jeong et Ys. Kwon, Monolithic implementation of coaxial line on silicon substrate, IEEE MICR G, 10(10), 2000, pp. 406-408
Citations number
10
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE MICROWAVE AND GUIDED WAVE LETTERS
ISSN journal
10518207 → ACNP
Volume
10
Issue
10
Year of publication
2000
Pages
406 - 408
Database
ISI
SICI code
1051-8207(200010)10:10<406:MIOCLO>2.0.ZU;2-I
Abstract
A coaxial line has been monolithically fabricated on silicon substrate usin g Benzocylobutene (BCB) for dielectric spacers. Because of its closed struc ture, it is an effective interconnection method to reduce parasitic radiati on and coupling effect. The fabricated coaxial line with 2 mm length has hi gh isolation (<-60 dB), low attenuation (<0.08 dB/mm) and low return loss ( <-32 dB) in the range of 1 GHz-20 GHz, It can be easily fabricated using st andard silicon IC technologies, and requires no wafer thinning and backside processing In view of cost performance and integration density, the coaxia l line on low-resistivity silicon is shown to be suitable for RF interconne ct and multichip module (MCM) package applications.