A new approach to the design optimization of HEMT and HBT for maximum gain-bandwidth of MSM-based integrated photoreceiver and its noise performance at 1.55 mu m
Nr. Das et al., A new approach to the design optimization of HEMT and HBT for maximum gain-bandwidth of MSM-based integrated photoreceiver and its noise performance at 1.55 mu m, IEEE DEVICE, 47(11), 2000, pp. 2101-2109
A new and simple approach has been proposed for the design optimization of
devices using PSPICE, and it has been applied to the design of high electro
n mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs
) for the maximum gain-bandwidth (GBW) of a front-end integrated photorecei
ver that uses metal-semiconductor-metal (MSM) structure as the photodector
at 1.55 mum, The standard high frequency circuit models are used with some
important modifications to simplify the model equations. The results of the
optimized design show that the gain-bandwidth of the photoreceiver can be
raised to a very high value compared to those of nonoptimized structures. F
inally, the sensitivity of the integrated photoreceivers are calculated for
a bit-error-rate of 10(-9).