Injection efficiency of CHISEL gate currents in short MOS devices: Physical mechanisms, device implications, and sensitivity to technological parameters

This paper analyzes MOSFETs gate currents in the so-called channel initiate d secondary electron injection regime (CHISEL), A Monte Carlo model of the phenomenon is validated and then extensively used to explore CHISEL scaling laws, Results indicate that, compared to conventional channel hot electron injection (CHE), CHISEL exhibits a weaker dependence on channel length and a larger sensitivity to short channel effects. These results are confirmed experimentally and exhaustively explained with the help of simulations; furthermore, some of their possible detrimental co nsequences on the programming efficiency of CHISEL based flash cells are an alyzed, Finally, the impact of channel doping, oxide thickness, and junctio n depth on CHISEL efficiency has been explored, and guidelines to maintain high injection efficiency in short devices are derived.