Characterization of silicon carbide (SiC) epitaxial channel MOSFETs

Authors
Wagner, WE White, MH
Citation
We. Wagner et Mh. White, Characterization of silicon carbide (SiC) epitaxial channel MOSFETs, IEEE DEVICE, 47(11), 2000, pp. 2214-2220
Citations number
26
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
47
Issue
11
Year of publication
2000
Pages
2214 - 2220
Database
ISI
SICI code
0018-9383(200011)47:11<2214:COSC(E>2.0.ZU;2-7
Abstract
Silicon carbide (SiC) epitaxial channel MOSFETs have been fabricated on 6H SIC substrates with NS epitaxial source and drain electrodes. The electrica l characteristics have been modeled in sub-pinchoff, depletion and accumula tion modes of operation. A buried channel mobility of 230 cm(2)/Vs and an a ccumulation-mode surface mobility of 45 cm(2)/Vs are extracted at room temp erature under a 50% activation of channel donor impurities.