Modeling of reverse current behavior in amorphous thin and thick p-i-n diodes

We present an analytical model for the calculation of the nonuniform electr ic field distribution inside the three layers of an amorphous p-i-n diode. Field dependent Poole-Frenkel emission factors, responsible for the exponen tial voltage dependence of the dark current of amorphous p-i-n diodes are r ecalculated for the resulting nonuniform electric field distribution inside the intrinsic layer. Results are compared with experiments and with calcul ations using the constant field distribution approximation to show under wh ich conditions each approach can be used.