Recent progress in mid- and far-infrared semiconductor detectors

The recent developments of semiconductor infrared detectors in extending th e wavelength coverage and improving the focal plane array (FPA) performance are reviewed. The emphasis is on the GeSi/Si heterojunction infrared photo emission detectors (HIPs), GaAs/AlGaAs quantum well infrared photodetecots (QWIPs), Si, Ge and GaAs blocked impurity band detectors (BIBs), and Si and GaAs homojunction interfacial work-function internal photoemission (HIWIP) far-infrared (FIR) detectors. The advantages, current status, and potentia l limitations of these infrared detectors have also been discussed.