Decomposition of C-60 molecules on Si(100)(2 x 1) surface

Citation
S. Erkoc et S. Katircioglu, Decomposition of C-60 molecules on Si(100)(2 x 1) surface, INT J MOD C, 11(5), 2000, pp. 1067-1076
Citations number
24
Categorie Soggetti
Physics
Journal title
INTERNATIONAL JOURNAL OF MODERN PHYSICS C
ISSN journal
01291831 → ACNP
Volume
11
Issue
5
Year of publication
2000
Pages
1067 - 1076
Database
ISI
SICI code
0129-1831(200007)11:5<1067:DOCMOS>2.0.ZU;2-I
Abstract
We have investigated the decomposition of C-60 molecules with low and high coverages on Si(100)(2 x 1) surface at elevated temperatures. We also inves tigated the decomposition of an isolated C-60 molecule. We employed molecul ar-dynamics simulation using a model potential. It has been found that C-60 decomposes on Si(100) surface after 1000 K in the case of low coverage (0. 11), however in high coverage case (0.67), C-60 molecules decompose after 9 00 It. On the other hand, isolated C-60 molecule decomposes after 7500 K, i nterestingly it shows a phase change from 3D to 2D at higher temperatures.