We have investigated the decomposition of C-60 molecules with low and high
coverages on Si(100)(2 x 1) surface at elevated temperatures. We also inves
tigated the decomposition of an isolated C-60 molecule. We employed molecul
ar-dynamics simulation using a model potential. It has been found that C-60
decomposes on Si(100) surface after 1000 K in the case of low coverage (0.
11), however in high coverage case (0.67), C-60 molecules decompose after 9
00 It. On the other hand, isolated C-60 molecule decomposes after 7500 K, i
nterestingly it shows a phase change from 3D to 2D at higher temperatures.