Fabrication of PbTiO3/Pt/Yttria stabilized ZrO2 heteroepitaxial films on Si substrate

Fabrication of PbTiO3/Pt/yttria-stabilized ZrO2(YSZ) heteroepitaxial films on Si substrate was investigated with the aim of applying them to electric devices such as integrated infrared sensors and ferroelectric random-access memories (FRAMs). First, a (100)YSZ buffer layer was epitaxially grown on a (100)Si substrate using reactive electron-beam evaporation. In this proce ss, a metallic Zr film was deposited before YSZ deposition in order to prev ent a Si substrate surface from oxidizing. Then, Pt film was sputtered on t he buffer layer. A rough YSZ surface attained by slightly etching the Si su bstrate surface is found to be essential to obtain (100)-oriented Pt films, while (111)-oriented Pt films were obtained on a smooth YSZ surface. This indicates that we can control the orientation of Pt film by controlling the morphology of the YSZ surface. Lastly, a (001)-oriented PbTiO3 film was ep itaxially grown on (100)Pt/(100)YSZ/(100)Si using metalorganic chemical vap or deposition (MOCVD).