Preparation of Pb(Zr, Ti)O-3 thin films on glass substrates

Citation
T. Hioki et al., Preparation of Pb(Zr, Ti)O-3 thin films on glass substrates, JPN J A P 1, 39(9B), 2000, pp. 5408-5412
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
39
Issue
9B
Year of publication
2000
Pages
5408 - 5412
Database
ISI
SICI code
Abstract
Lead-zirconate-titanate (PZT) thin films were prepared on non-alkaline glas s substrates widely used in liquid crystal display (LCD) devices, by plasma -assisted magnetron RF sputtering with an immersed coil. After preparation of the PZT thin film, the glass was available for use in LCD device process ing. No mutual diffusion of the elements was recognized between the glass s ubstrate and the bottom electrode. The PZT layer had a dense film structure with rectangular and columnar grains, and only its perovskite phase was cr ystalline. PZT thin films on a glass substrate had leakage current densitie s of about 10(-8) A/cm(2), acceptable hysteresis loop shapes with the reman ent polarization. (P-r) of 45 muC/cm(2) and the coercive field (E-c) of 90 kV/cm. Ferroelectric properties on a glass substrate almost conform with th ose on a Si-based substrate.