T. Iijima et al., Ferroelectric properties of Al-doped lead titanate zirconate thin films prepared by chemical solution deposition process, JPN J A P 1, 39(9B), 2000, pp. 5426-5428
2.5 and 5 mol% Al were doped to lead titanate zirconate (PZT) thin films us
ing a chemical solution deposition process, and ferroelectric properties of
Al-doped PZT thin films were compared with those of nondoped PZT film. Dop
ed Al seems to be substituted at the Zr/Ti site (B site) since the c/a rati
o decreased with increasing Al content. The shape of a P-E hysteresis curve
of the thin films did not show remarkable differences between nondoped and
Al-doped PZT. Values of P-s, P, and E-c of the 2.5 mol% Al-doped PZT thin
films were about 43 muC/cm(2), 19 muC/cm(2) and 58 kV/cm, respectively. On
the other hand, the leakage current of the thin films showed a tendency to
decrease with increasing Al content. The fatigue properties of the Al-doped
PZT thin film showed a slight improvement, because the reduction rate of t
he fatigue was smaller than that of a nondoped PZT thin film.