Preparation and characterization of epitaxial lead zirconate titanate films on Pt/(Ti, Al)N/TiN/Si substrates by metalorganic chemical vapor deposition

[001]-Oriented lead zirconate titanate (PZT) thin films were epitaxially gr own on Pt/titanium-aluminum-nitride (TAN)/titanium-nitride (TiN)/Si substra tes by metalorganic chemical vapor deposition (MOCVD). Epitaxial thin films of TAN were formed as buffer layers on the Si substrates by pulsed-laser d eposition (PLD) using TiN seed layers. Oxidation of the TAN was prevented b y a sufficiently thick epitaxial Pt layer between the PZT and the TAN, ther eby improving the crystallinity and electrical properties of the PZT films. The epitaxial PZT films had a dielectric constant of 697 and a remanent po larization of 38 muC/cm(2).