Preparation of SrBi2Ta1.5Nb0.5O9 ferroelectric thin films by RF sputteringon large substrate

Ferroelectric SrBi2(Ta, Nb)(2)O-9(SBTN) thin films were prepared by RF magn etron sputtering utilizing a multichamber production tool (ULVAC CERAUS ZX1 000). Accurate and dynamic compositional control provided by this method re sults in excellent ferroelectric performances such as large P-r up to 15 mu C/cm(2), at least 10(9) cycles fatigue: free and good 6-inch wafer uniformi ty. Good process reproducibility was also confirmed in terms of deposition rate, composition, and electrical properties through a 30-wafer nonstop spu ttering test. These results indicate that the SBTN sputtering process is pr omising for ferroelectric memory production.