Metal-organic chemical vapor deposition and characterization of strontium bismuth tantalate (SBT) thin films

The metal-organic chemical vapor deposition (MOCVD) of ferroelectric thin f ilms is being widely investigated for the manufacture of devices requiring a high density of volatile or non-volatile memory which goes beyond the lim its of current mass production techniques. One of the more important challe nges in the MOCVD of multi-component oxide thin films is the precise contro l of stoichiometry which relates directly to the films' electrical characte ristics. A novel approach to liquid precursor delivery embodied in the AIXT RON TriJet(TM) liquid delivery; system is reported. Physical and electrical properties of thin films as well as deposition characteristics as a functi on of various process parameters are described in detail. Most notably 2P(r ) = 13 muC/cm(2) at 5 V with leakage current density J(1) = 1E - 8 A/cm(2) @ less than or equal to 5 V were obtained. In addition, films with excellen t thickness uniformity with 3 sigma = 2.25% at 180 nm were deposited on 6 " Pt/TiOx/Si wafers. Finally, near 100% step coverage with a maximum 2 : 1 a spect ratio (0.5 mum) was achieved.